Данни катедра: Физика на полупроводниците



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(2.1.2) Списък на публикации (чужбина):





Автори

Заглавие

Списание

Том

Страници

Година

1

T. Furusho, S.K. Lilov, S. Ohshima,

S. Nishino



Effect of Tantalum in Crystal Growth of Silicon Carbide by Sublimation Close Space Technique”

Japn. J. Appl. Phys., Part I,

40

6737-6740

2001

2

T. Furusho, S.K. Lilov, S. Ohshima ,

S. Nishino



Crystal Growth of Silicon Carbide in Hydrogen Atmosphere by Sublimation Close Space Technique”


J. Crystal Growth

237-239

1235-1238

2002

3

V. Marinova, I. Yanchev, M. Daviti,

K. Kyritsi, A.N. Anagnostopoulos



Electron- and Hole-Mobility of Hg(BrxI1-x)2 Crystals”

Materials Research Bulletin

37

1991-1995

2002

4

M. Veleva, M.M. Gospodinov, M. Daviti, A.N. Anagnostopoulos, K.M. Paraskevpoulos, E.K. Polychroniadis, I.Y. Yanchev

Dielectric Behaviour of Mixed HgBrxI1-x Crystals”


Journal of Materials Science Letters

19

1019

2002

5

M. Gospodinov, I.Y. Yanchev, D. Petrova,

M. Veleva



AC Conductivity of Doped Bi12SiO20 Crystals”


Materials Science and Engineering

B77

88-92

2003

6

I.Y. Yanchev

Randomly Distributed Charges and Potential Fluctuations in MOS Structures”

Chaos, Solitons and Fractals

17

441-443

2003

7

E. György, I. N. Mihailesku, M. Baleva,

E. P. Trifonova, M. Abrashev,

V. Darakchieva, A. Zocco, A. Perrone


About the possible diminution of the sp3 C presence along with the increase of the nitrogen enclosure in the CNx thin films produced by reactive pulsed laser deposition”

J. Mater. Sci

36

1951-1956

2001

8

E. György, I. N. Mihailesku, M. Baleva,

M. Abrashev, E. P. Trifonova, A. Szekeres,

A. Perrone


Correlation between the chemical bonding and the physical properties of the CNx films obtained by pulsed laser deposition from C targets in low-pressure N2

Mater. Sci. & Eng.

B97


251-257

2003

9

E. Goranova, B. Amov, M. Baleva, E. P. Trifonova, P. Yordanov

Ion beam synrhesis of Mg2Si”

J. Mater. Sci.

39

1857-1859

2004

10

A.A. Donkov,A.D. Donkov

E.I Grancharova





The exact solution of the Cauchy problem for a generalized “linear” vectorial Fokker-Plank equation – algebraic opproach”

Phys.of Atomic Nuclei

65

1049

2002

11

A.A. Donkov,A.D Donkov

E.I Grancharova





Exact solution of classical motion equation for a charged particle in external electric and magnetic fields”

Phys.of Atomic Nuclei

65

1053

2002

12

T. Paskova, E. Valcheva, J. Birch,

S. Tungasmita, P.-O.A. Persson, P. Paskov,

S. Evtimova, M. Abrashev B. Monemar


Deffect and Stress Relaxation in HVPE-GaN Films Using High Temperature Reactively Sputtered AlN Buffer”

J. Cryst. Growth

230

381-386

2001

13

G.P. Vassilev, J.-C. Tedenac, E.S. Dobrev, S.K. Evtimova

On the Phase Equilibria in the System Ag-Sn-Zn”

Archives of Metallurgy

46

249-254

2001

14

G.P. Vassilev, E.S. Dobrev, S.K. Evtimova, J.-C. Tedenac

Studies of the Phase Equilibria in the Ag-Sn-Zn System”

J. Alloys and Compounds

327

285-291

2001

15

B. Arnaudov, T. Paskova, E.M. Goldys,

S. Evtimova, B. Monemar



Modeling of the Free-electron Recombination Band in Emission Spectra of Highly Conducting n-GaN

Phys. Rev. B

64

045213/1–045213/12

2001

16

G.P. Vassilev, S.K. Evtimova, J.-C. Tedenac, E.S. Dobrev,

Experimental Study of the Ternary Ag-Sn-Zn System Trough Diffusion Couples”

J. Alloys and Compounds

334

182-186

2002

17

B. Arnaudov, T. Paskova,, S. Evtimova,

E. Valcheva, M. Heuken, B. Monemar



Multilayer Model for Hall Effect Data Analysis of Semiconductor Structures with Step – Changed Conductivity”

Phys. Rev. B

67

045314/1-045314/10

2003

18

B. Arnaudov, T. Paskova,, O. Valassiades, P.P. Paskov, S. Evtimova, B. Monemar,

M. Heuken,



Magnetic Field Induced Localization of Electrons in InGaN/GaN Multiple Quantum Wells”

Appl. Phys. Lett.

83

2590-2592

2003

19

B. Arnaudov, T. Paskova,, O. Valassiades, P.P. Paskov, S. Evtimova, B. Monemar,

M. Heuken,



Magnetic Field Induced Localization of Electrons in InGaN/GaN Multiple Quantum Wells”

/избрана за публикуване/



Virtual Journal of Nanoscale Science & Technology

Oct. 6




2003

20

G.P. Vassilev, P. Docheva, N. Nancheva,

B. Arnaudov, I. Dermendjiev



Technology and Properties of Magnetron Sputtered CuInSe2 Layers”

Materials Chemistry and Physics

82

905-910

2003

21

B. Arnaudov, T. Paskova, P.P. Paskov,

B. Magnusson, E. Valcheva, B. Monemar,

H. Lu, W.J. Schaff, H. Amano, I. Akasaki


Energy Position of Near Band – Edge Emission Spectra of InN Epitaxial Layers with Different Doping Levels”

Phys. Rev. B

69

115216/1 –115216/5

2004

22

B. Arnaudov, T. Paskova, P.P. Paskov,

B. Magnusson, E. Valcheva, B. Monemar,

H. Lu, W.J. Schaff, H. Amano, I. Akasaki


Free-to-bound radiative recombination in highly conducting InN epitaxial layers”

Superlatices and Microstructures

36

563-571

2004

23

A. Popov, N. Nаjdenov

Study and analisys of degradation processes in the electronic equip;ent operating at Kozloduy NPP”

J.Optoelectronics and Advanced Materials

7

321-324

2005

(2.1.2) Списък на публикации (български):





Автори

Заглавие

Списание

Том

Страници

Година

1

S. Lilov, T. Nishiguchi, S. Nishino.

Study on the Growth Conditions of Silicon Carbide Monocrystals from Vapor Phase”

Annuaire de L'Univ. Sofia, Fac.de Phys.

96

83-88

2003

2

S.K. Lilov, T. Furusho, S. Nishino

Growth of Silicon Carbide Layers by Sublimation Epitaxy”

Annuaire de L'Univ. Sofia, Fac.de Phys.

96

89-95

2003

3

С. Лилов

Получаване на силициев карбид”

Annuaire de L'Univ. Sofia, Fac.de Phys.

97

141-146

2004

4.

М. Сасаки, С. Лилов, Ш. Нишино

Изследване гтвърдостта на силициев карбид”

Annuaire de L'Univ. Sofia, Fac.de Phys.

97

147-154

2004

5

Т. Фурушо, С. Лилов, Ш. Нишино

Изследване процеса на израстване на обемни монокристали от 4H-SiC”


Annuaire de L'Univ. Sofia, Fac.de Phys.

98

121-128

2005

6

Х. Такаги, Т. Нишигучи, Ш. Ота,

Т. Фурушо, С. Ошима, С. Лилов,

Ш. Нишино


Израстване на монокристален 6H-SiC върху 3С-SiC чрез сублимационна епитаксия”

Annuaire de L'Univ. Sofia, Fac.de Phys.

98

129-137

2005

7

A. Popov K. Varblianska, S. Tzeneva

Ohmic contscts to InAsSb epitaxial layers doped with group IV elements”

Годишник на СУ, физ.ф-т

95

83

2002

8

А. Попов

Сътрудничество с БАН”

Наука

5

17

2001

9

А. Попов

За научните степени и звания”

Наука

2

8

2002

10

А.Попов , Р. Николов

Информационни технологии в образованието”

Наука

4

9

2002

11

А.Попов

С оптимизъм за високите технологии”

Наука

6

33

2002

12

E.P. Trifonova, R. Yakimova, T. Angelova,

E. Jansen



Microhardness-depth profiles of Si/SiC layered structures prepared by chemical vapour deposition”

Bulg. J. Phys

28

147-152

2001

13

G. Vassilev, B. Arnaudov, P. Docheva,

N. Nancheva, M. Balcheva



CuInSe2 - Alternative Material for Solar Energy Conversion”

Annuaire De L’Universite De Sofia “St. Kliment Ohridski” Faculte De Chimie

92-94

207-210

2001

14

M. Gospodinov, V. Marinova, I. Yanchev,

A. Anagnostopoulos, K. Kyritsi



The SnS2-SnSe2 System: Growth and Morphology

Bulg. J. Phys.

27

169-171

2000

(2.1.2) Участия на конференции, публикувани в списания:





Автори

Заглавие

Конференция

Град

Държава

Дати

Списание

Том

Страници

Година

1

B. Arnaudov, T. Paskova, S. Evtimova, M. Heuken, B. Monemar

Hall Effect Data Analysis of GaN n+n Structures”

International Workshop on Nitride Semiconductors

Aachen

Germany

July 22-25 2002

Phys. Stat. Solidi (b)

234

872-876

2002

2

S. Evtimova, B. Arnaudov, T. Paskova, B. Monemar, M. Heuken

Effect of Carrier Concentration on the Microhardness of GaN Layers

12th International School on Condensed Matter Physics (ISCMP) “Modern Trends in Condensed Matter Science and Technology”

Varna

Bulgaria

Sept. 3-8 2002

J. of Material Science – Materials in Electronics

14

905-910

2003

3

B. Arnaudov, T. Paskova, O. Valassiades, S. Evtimova, P.P. Paskov, B. Monemar, M. Heuken,

Magnetic Freeze-out of Electrons in InGaN/GaN Multiple Quantum Wells”

5th International Conference on Nitride Semiconductors

Nara

Japan

May 25-30 2003

Phys. Stat. Solidi (c)

0

2635-2638

2003

4

T. Paskova, P.P. Paskov, V. Darakchieva, E.M. Goldys, E. Valcheva, B. Arnaudov, B. Monemar

Free-Standing HVPE-GaN Quasi-Substrates: Impurity and Strain Distributions”

International Workshop on Nitride Semiconductors

Aachen

Germany

July 22-25 2002

Phys. Stat. Sol. (c)

0

209-213

2002

5

B. Monemar, P.P. Paskov, H. Haradizadeh, J. Bergman, E. Valcheva, V. Darakchieva, B. Arnaudov, T. Paskova, P.O. Holtz, G. Pozina, S. Kamaiyma, M. Iwaya, H. Amano, I. Akasaki

Optical Investigations of AlGaN/GaN Quantum Wells and Superlattices”

Invated talk



International Conference on Photo-Responsive Materials

Kariega

South Africa

Febr.

25-29 2004



Phys. Stat. Solidi (a)

201

2251-2258

2004

6

T. Paskova, P.P. Paskov, E. Valcheva, V. Darakchieva, J. Birch, A. Kasik, B. Arnaudov, S. Tungasmita, B. Monemar

Polar and Nonpolar GaN “Growth by HVPE: Preferable Substrates dor Nitride – based Emitting Diodes”

International Conference on Photo-Responsive Materials

Kariega

South Africa

Febr.

25-29 2004



Phys. Stat. Solidi (a)

201

2265-2270

2004

7

B. Monemar, H. Haradizadeh, P.P. Paskov, J.P. Bergman, E. Valcheva, B. Arnaudov, A. Kasic, P.O. Holtz, G. Pozina, S. Kamaiyama, M. Iwaya, H. Amano, I. Akasaki

Radiative Recombination Processes in Al0.07Ga0.93N/GaN Multiple Quantumtructures: Role of Hole Localization

5th International Symposium on Blue Laser and Light Emitting Diodes

Gyeongji

Korea

March 2004

Phys. Stat. Solidi (c)

1

2500-2503

2004

8

T. Zorba, K.M. Paraskevopoulos, D.I. Siapkas, E. Pavlidou, S. Angelova D.B. Kushev

The Xth Cent. Church in Drustar: Study of Wall Paintings by Spectroscopic Methods”


SYMPOSIUM II, Materials Issues in Art and Archaeology VI, 2001 MRS Fall Meeting

Boston

USA

November 26 - 30, 2001

Mat.Res. Soc. Symp. Proc. ,


712

II 10.10.1-8

2002
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