Катедра Физика на кондензираната материя, Физически факултет, бул



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Лична информация




Име




Балева, Митра Иванова

Адрес




Катедра Физика на кондензираната материя, Физически факултет, бул. Джеймс Баучър 5, гр. София 1164, България

Телефон




8161459 - служебен

Факс







E-mail




baleva@phys.uni-sofia.bg

Националност




българка



Дата на раждане




10.10.1942



Трудов стаж




• Дати (от-до)




от 06.1988 - доцент

06.1972 – 06.1988 – асистент, старши асистент, главен асистент

12.1967 – 06.1972 – стажант асистент

• Име и адрес на работодателя




Софийски Университет, Ректор Проф. Иван Илчев

• Вид на дейността или сферата на работа




преподавател

• Заемана длъжност




доцент

• Основни дейности и отговорности




Преподавателска и научна работа



Преподавателски опит

(може и в приложение)


• Дати (от-до)




12.1967- до сега

• Учебно заведение




Софийски Университет

• Факултет/Департамент




1967-1972 Физически факултет;1967-1972 – катедра «Полупроводници»; от 1972 до сега – катедра «Физика на кондензираната материя»

• Курсове




1.Електричество и магнетизъм и 2. Оптика от курса поОбща физика;

3. Експериментални методи във физиката на твърдото тяло;

4. Спектроскопия на твърдото тяло




Научни публикации




Supplement 1




Образование и обучение




• Дати (от-до)




1983 – кандидат на физическите науки, Софийски Университет

1963 – 1967 Московски Енергетичен Институт, полупроводникови прибори

1960 – 1963 Софийски Университет, Физически факултет.


• Име и вид на обучаващата или образователната организация




1983 – кандидат на физическите науки, Софийски Университет

1963 – 1967 Московски Енергетичен Институт, полупроводникови прибори

1960 – 1963 Софийски Университет, Физически факултет.


• Основни предмети/застъпени професионални умения




Теоретични и експериментални умения по полупроводникови материали и прибори

• Наименование на придобитата квалификация




Инженер по полупроводникови прибори

Кандидат на физическите науки

• Ниво по националната класификация (ако е приложимо)




Доктор по физика




Лични умения и компетенции

Придобити в жизнения път или в професията, но не непременно удостоверени с официален документ или диплома.




Майчин език




български



Други езици









английски ; Руски; Френски

• Четене




отлично ; отлично; основно

• Писане




отлично ; отлично; основно

• Разговор




отлично ; отлично; основно




Социални умения и компетенции

Съвместно съжителство с други хора в интеркултурно обкръжение, в ситуации, в които комуникацията и екипната работа са от съществено значение (например в културата и спорта) и др.




Съвместно съжителство с други хора в интеркултурно обкръжение като член на колектива на физически факултет и катедрата по физика на кондензираната материя.




Организационни умения и компетенции

Координация, управление и адмистрация на хора, проекти и бюджети в професионалната среда или на доброволни начала (например в областта на културата и спорта) у дома и др.




Координация, управление и адмистрация на хора, проекти при изпълнение на научно изследователски проекти.




Технически умения и компетенции

Работа с компютри, със специфично оборудване, машини и др.




Работа с компютри и със специфично оборудване при изпълнение на преподавателската си и научна работа.




Други умения и компетенции

Компетенции, които не са споменати по-горе.




Ръководство на докторанти




Свидетелство за управление на МПС




да



Приложения




Supplement 1 - научни публикации

Supplement 2 - Научни проекти


Научни публикации

2008

M. Baleva, A. Atanassov, M. Marinova , G. Zlateva, N. Todorov, Raman scattering of Si matrix with randomly distributed nanoparticles of semiconducting silicides in it, J. Nanosci. Nanotechnol. 8(2), 768-774 2008.

M. Marinova, M. Baleva, G. Zlateva , Resonant Raman and micro-Raman scattering from Si matrix with unburied - FeSi2 nanolayers, , J. Nanosci. Nanotechnol. 8(2), 775–779, 2008.

Marinova Maya, Baleva Mitra, Goranova Ekaterina, Experimental investigation of the band edge anisotropy of the -FeSi2 semiconductor, Solid State Sciences, in press

M Baleva, G Zlateva, A. Atanassov, M. Marinova , E Polychroniadis, Polariton modes in ion-beam synthesized Mg2Si nanolayers, 2008 J. Phys.:Conf. Ser. 113 012042

M Baleva, A. Atanassov, M. Marinova , Infrared spectra of semiconducting silicides’ layers, 2008 J. Phys.:Conf. Ser. 113 012043
2007

Marinova, E. Sutter, M. Baleva, Electron Microscopy Study of Ion Beam Synthesized -FeSi2, Journal of Materials Science, Journal of Materials Science 42 (1), pp. 207-214 (2007)

A. Atanassov, M. Baleva, On the band diagram of Mg2Si/Si heterojunction as deduced from optical constant dispersions, Thin Solid Films 515 (2007) 3046-3051

G Zlateva, A Atanassov, M Baleva, L Nikolova and M V Abrashev,   Polarized micro-Raman scattering characterization of Mg2Si nanolayers in (001) Si matrix, J. Phys.: Condens. Matter 19 (2007) 086220



M. I. Baleva, E. A. Goranova, M. M. Marinova, A. A. Atanassov, Heterojunctions between Silicon and the Semiconducting Metal Silicides -FeSi2 and MgSi2, ECS Transactions - ULSI vs. TFT Conference, V. 8, July 2007

Mitra Baleva, AleksandАr Atanasov, Genoveva Zlateva, Neno Todorov, Surface and Interface Polaritons in Si Matrix with Buried and Unburied Mg2Si nanolayers, in book: PHYSICS, CHEMISTRY AND APPLICATION OF NANOSTRUCTURES, 2007

2006

Alexander Atanassov , G. Zlateva, Mitra Baleva, Ekaterina Goranova, Blagoj Amov, Christo Angelov , and Valdek Mikli, Raman Scattering Characterization of Ion-Beam Synthesized Mg2Si: I. Influence of the Technological Conditions on the Formation of the Mg2Si in (100) Si Matrix, Plasma Process .Polym., 3, 219—223 (2006)

Genoveva Zlateva, Alexander Atanassov, Mitra Baleva and Lora Nikolova, Raman Scattering Characterization of Ion-Beam Synthesized Mg2Si: Part II.On the Orientational Growth of Mg2Si Phase in (001) and (111) Si Substrates, Plasma Process. Polym, 3, 224—228 (2006)

Maya Marinova, Genoveva Zlateva, and Mitra Baleva, Influence of the Implantation Dose and the Annealing Duration on the Raman Spectra of Ion-beam Synthesized -FeSi2 Layers, Plasma Process Polym., 3, 229—232 (2006)

M. Marinova, M Baleva, E. Sutter, Structural and optical characterization of the formation of -FeSi2 nanocrystallites in n-type (100) Si matrix, Nanotechnology, 17 (2006) 1969 -1974

2005

M. Baleva, G. Zlateva, A. Atanassov, M. Abrashev, E. Goranova, Resonant Raman scattering in ion-beam-synthesized Mg2Si in a silicon matrix, Phys. Rev. B 72, 115330 (2005)


2004

Goranova E, Amov B, Baleva M, E. P. Trifonova, P. Jordanov, Ion beam synthesis of Mg2Si, J Matt. Sci 39 1857-1859 2004

M. Marinova, M. Baleva, E. Goranova, Optical dielectric function anisotropy of the beta-FeSi2 phase,Vacuum, 76/2-3 273-276 2004

A. Atanassov, M. Baleva, E. Goranova, V. Darakchieva, Graizing incident assymetric X-ray diffraction study of the orientation of beta-FeSi2 crystallites, produced by ion-beam synthesis, along the layers depth, Vacuum, 76/2-3 277-280 2004


2003

V. Darakchieva, M. Surtcnev, E. Goranova, M. Baleva, Effect of rapid thermal annealing on the structure of ion beam synthesized beta-FeSi2, Vacuum, 60 (1-3): 449-454 DEC 24 2003



M. Baleva, E. Goranova, V. Darakchieva, S. Kossinides, M. Kokkosis, P. Jordanov, Influence of grain size on the optical conductivityof beta-FeSi2 layers, Vacuum, 60 (1-3): 425-429 DEC 24 2003

M. Baleva, M. Surtcnev, Structural and optical characterization of laser deposited PbTe films on silicon substrates, Vacuum, 60 419-423 (2003)

E. Geogry, I. Mihailesku, M. Baleva, E.Trifonova, M. Abrashev, A. Szekeres, A. Perone, Correlation between the chemical bonding and the physical properties of the CNx films pulsed laser deposited from C targets in low pressure N2, Materials Science and Engineering, B97, 251 (2003)



Baleva M, Goranova E, Angelov C, Beshkov G, On the refractive index dispersions of ion-beam-synthesized beta-FeSi2 layers, J. Mat. Sci.-Materials in Electronics 14 (10-12): 849-850 OCT-DEC 2003

Е. Горанова, М. Балева, В. Даракчиева, Хр. Ангелов, Е. Трифонова, Получаване и изследване на слоеве и преципитати от beta-FeSi2, 25 години Централна лаборатория по слънчева енергия и нови енергийни източници, Юбилеен сборник, София, 2003

B. Amov, E. Goranova, M. Baleva, E. P. Trifonova, P. Yordanov, Ion beam synthesis of Mg2Si, INRNE BAS – Annual Report, v. 11, 2003

M. Baleva, E. Goranova, On the energy gap beta-FeSi2 phase in the vicinity of the absorption edge, Proceedings of the Fifth General Conference of the Balkan Physical Union BPU-5, ed. S. Jokic, A. Balaz, Z. Nikolic, August, Vrnjachka Bania, Serbian Physical Society Belgrade, (2003), p.523

A. Atanassov, M. Baleva, E. Goranova, V. Darakchieva, M. Surchev, Graizing incident assymetric X-ray diffraction of the beta-FeSi2 layers, produced by ion-beam synthesis, Proceedings of the Fifth General Conference of the Balkan Physical Union BPU-5, ed. S. Jokic, A. Balaz, Z. Nikolic, August, Vrnjachka Bania, Serbian Physical Society Belgrade, (2003), p. 859

M. Marinova, M. Baleva, E. Goranova, On the anisotropy of the optical dielectric function of the beta-FeSi2 layers, Proceedings of the Fifth General Conference of the Balkan Physical Union BPU-5, ed. S. Jokic, A. Balaz, Z. Nikolic, August, Vrnjachka Bania, Serbian Physical Society Belgrade, (2003), p. 865
2001

E. Geogry, I. Mihailesku, M. Baleva, E.Trifonova, M. Abrashev, V. Darakchieva, A. Zocco, A. erone, About the possible ditermination of the sp3 C presence along with the increase of the nitrogen enclosure in CNx thin films produced by reactive pulsed laser deposition, J. of Mat. Sci., 36 1-6(2001)

Ch. Angelov, M. Baleva, V. Darakchieva, E. Goranova and M. Surchev, Infrared vibrational spectra of beta-FeSi2 and alpha-Fe2O3, Proceedings of the Eleventh International School on Condensed Matter Physics, ed. J. M.Marshall,September, Varna, (2001), p. 428-431

Ch. Angelov, M. Baleva, E. Goranova, V. Darakchieva, D.Karpuzov and M. Surchev, The optical band gap of the beta-FeSi2 phase, Proceedings of the Eleventh International School on Condensed Matter Physics,ed. J. M.Marshall, September,Varna, (2001), p. 456-459



М. Балева и Е. Горанова, Перспективи за използуване на полупроводниковата фаза на железен дисилицид като фотоволтаичен материал, Младежка школа по възобновяеми източници на енергия, Варна, 1-6, 2004, лекция
2000

V. Darakchieva, M. Baleva, E. Mateeva, M. Surchev, Properties of silicon films grown by laser-assisted deposition, Vacuum, 369--373 (2000)

V. Darakchieva, M. Baleva, E. Goranova, Ch. Angelov, Ion beam synthesis of beta-FeSi2, Vacuum, 58 415--419 (2000)

V. Darakchieva, M. Baleva, M. Surchev and E. Goranova, Structural and optical analysis of beta-FeSi2 thin layers prepared by ion-beam synthesis and solid-state reaction, Phys. Rev. B, 62(19) 13057--13063 (2000)



M. Baleva, V. Darakchieva, E. Goranova, E. Trifonova, Microhardness characterization of structures obtained by iron-silicon sold-state reaction, Materials Science and Engineering, 78 131-134 (2000)
1999
M. Baleva, E. Mateeva, and E. Trifonova, Distribution of the crystal modifications in polymorphous PbSe films revealed by microhardness measurements, J. Mat. Sci., 34 795-799 (1999)

M. Baleva, V. Darakchieva, E. Goranova,and E. Trifonova, Microhardness characterization of structures obtained by iron-silicon sold-state reaction, in Proceedings of 18th Greek-Bulgarian Symposium of Semiconductor Physics, Fabruary 15-19,(1999), p. 37-45, Aristotle University of Thessaloniki and Physics Department Solid State Section

V. Darakchieva and M. I. Baleva, Properties of luminescent silicon films grown by laser-assisted deposition, Proceedings of NATO ASI Series, September, Sozopol, (1999)

V. Darakchieva, E. Goranova and M. I. Baleva, Preparation of beta-FeSi2 phase by solid state reaction, Proceedings of Summer School on Advanced Materials for Industrial Applications, ed. M. Katsikini, E.C.Paloura, Th. Karakostas, J.Antonopoulos, June 20-27, 1999, Kavala, Greece, 129-132

V. Darakchieva, M. Baleva, M. Surthcev, E. Goranova, Strictural and optical characrerization of beta- FeSi2 phase, Proceedings of The Meeting of Young Researchers in Physics, dedicated to the 110th Anniversary of the Faculty of Physics, December 17, 9, 1999.



1998

V. Daraktchieva, M. I. Baleva and E. Mateeva, Luminescence from Si films grown by pulsed laser evaporation,Proceedings of the Tenth International School on Condensed Matter Physics, 1-4 September, Varna, (1998), p.429- 432 ed. J. M. Marshall, N. Kirov and A. Vavrek, J. M. Maud, World Scientific, Singapore - New Jersey - London - Hong Kong

E. Mateeva and M. Baleva, Optical characterization of films represening heterophase junctions, Ann. Univ. Sofia, 88 203-209 (1998)
1996

M. Baleva and E. Mateeva, Influence of the doping and substrate type on the metastable phase growth in pulsed-laser evaporated PbTe films, J. Mat. Sci., 31 1213-1219 (1996)
1995

M. I. Baleva, E. Mateeva, Laser-assisted deposition of metastable phases and heterophase junctions, Bolkan Phys. Letters, 3 154-158 (1995)

M. I. Baleva, E. Mateeva, Detection of the metastable TlI-type phase of PbSe in films grown by electron beam evaporation: I. X-ray diffraction, J. Mat. Sci. Lett., 14 158-160 (1995)

M. I. Baleva, E. Mateeva, and M. Marinov, Detection of the metastable TlI-type phase of PbSe in films grown by electron beam evaporation: II.Transmittance spectra, J. Mat. Sci. Lett., 14 958-959 (1995)

M. Baleva, E. Mateeva, Growth of metastable phases and heterophase junctions Advances in Inorganic Films and Coatings. Proceedings of Topical Symposium l on Advances in Inorganic Films and Coatings of the 8th CIMTEC-World Ceramics Congress and Forum on New Materials 59-80 1995



V.D. Tuncheva and M. I. Baleva, Crystal Structure investigation of PbO thin films produced by pulse laser evaporation, Proceedings of NATO ASI Series, ed. M. Balkanski and I. Yanchev, Fabrication, Properties and Applications of Low-Dimentional Semiconductors, 1995, Klwer Academic Publishers. Printed in the Netherlands, 3 103 -104 (1995)

V.D. Tuncheva and M. I. Baleva, The Application of Pulsed Laser Deposition for producing of PbO coatings, Proceedings of Elevated Temperature Coatings: Science and Technology I, 3-6 Oct. 1994, Rosemont, IL, USA Elevated Temperature Coatings: Science and Technology I. Proceedings of a Symposium: High Temperature Coatings - I: 145-53, 1995.



M. Baleva, E. Mateeva, and E. Trifonova, Distribution of the Crystal Modifications in Polymorphous PbSe Films Reavealed by Microhardness Measurements, in Proceedings of 16th Greek-Bulgarian Symposium of Semiconductor Physics, 16-20 October, Thessaloniki, Greece, 221 - 235, Aristotele University ofThessaloniki, (1995).
1994

M. I. Baleva, V. D. Tuncheva, Optical Characterization of Lead Monoxide Films Grown by Laser-Assisted Deposition, J. Solid State Chemistry, 110 36-42 (1994).

M. I. Baleva, V. D. Tuncheva, Laser-Assisted Deposition of PbO films, J. Mat. Sci. Lett., 13 3-5 (1994)

M. I. Baleva, E. Mateeva, Pressure coefficient of the PbTe metastable CsCl-type-phase energy gap, Phys. Rev., B50} 8893 -8896 (1994)

M. I. Baleva, M. Momchilova, Raman modes of the GeS-type orthorhombic phase of PbTe, Phys. Rev. B50 15056 - 15062 (1994)}

M. Baleva, Metastable alloys:Preparation and properties (proceedings of symposium D on preparation of metastable phases, Materials Science and Engineering: B, Jul 1994, book review

M.Baleva, Photon, beam and plasma assisted processing (processing of symposium B on photon,beam and plasma assisted processing, Materials Science and Engineering: B, Jul 1994,book revie

M. Baleva, Beam processing and lase chemistry (proceedings of symposium D on beam processing and lase chemistry of the 1989 EMRS…) Materials Science and Engineering: B, Jul 1994,book review


1993

M. Baleva and E. Mateeva, The PbSe metastable phase: I.The growth mechanism, J. Phys.: Condens. Matter, 5 7959 -7970 (1993)

M. Baleva and E. Mateeva, The PbSe metastable phase: II. The energy gap of the CsCl-type phase of PbSe doped with Cd, J. Phys.:Condens. Matter, 5 7971 - 7978 (1993)

M. Baleva, L. Bozukov and E. Tzukeva, Crystal structure of PbTe films drown on KCl substrates by laser-assisted deposition, Semicond. Sci. Technol., 8 1208 - 1216 (1993)

M. I. Baleva, E. Mateeva, Temperature dependence of the energy gaps of the high-pressure phases of PbTe, Phys. Rev., B48 2659 - 2665 (1993)

M. Baleva, M. Momtchilova, Raman Modes of PbTe GeS-Type Orthorombic Phase, International Conference on Material SCIENCE AND TECHNOLOGY, OCTOBER 20-23, 1993, Sofia, Bulgaria, ed. M. Balkanski, Institut des Hautes Etudes

M. Baleva, E. Mateeva, Growth of Metastable Phases and Heterophase Junctions, International Conference on Material SCIENCE AND TECHNOLOGY, OCTOBER 20-23, 1993, Sofia, Bulgaria, ed. M. Balkanski, Institut des Hautes Etudes

E. Mateeva and M. Baleva, Temperature and Pressure Dependence of the Energy Gaps of the High-pressure PbTe Phases, International Conference on Material SCIENCE AND TECHNOLOGY, OCTOBER 20-23, 1993, Sofia, Bulgaria, ed. M. Balkanski, Institut des Hautes Etudes.
1992

M. Baleva, L. Bozukov and M. Momchilova, Phonons in polymorphous PbTe films: I. Infrared reflectivity of PbTe films on KCl substrates, J. Phys.: Condens. Matter, 4 4633 - 4644 (1992)

M. Baleva, I. Ivanov and M. Momchilova, Phonons in polymorphous PbTe films: II. Infrared and Raman spectra of PbTe and PbTe:Cr films on KCl substrates, J. Phys.: Condens. Matter, 4 4645 – 4652 (1992)

M. Baleva, E. Mateeva and M. Momchilova, The energy profile of polymorphous PbTe Films: I. Direct energy gaps in PbTe high-pressure phases and energies of the heterophase junctions, J. Phys.:Condens. Matter, 4 8997 - 9008 (1992).

M. Baleva, E. Mateeva, M. Petrauskas, R. Tomasiunas and R. Masteika, The energy profile of polymorphous PbTe Films: II. Recombination in heterophase PbTe films at high levels of optical exitation, J. Phys.: Condens. Matter, 4 9009 - 9014 (1992).

M. I. Baleva, Laser assisted deposition of new semiconuctor structures - heterophase junctions, Proceedings of the Seventh International School on Condensed Matter Physics, 19-26 September, Varna,(1992), p. 93 - 128 ed. J. M. Marshall, N. Kirov and A. Vavrek, World Scientific, Singapore - New Jersey - London - Hong Kong, invited.


1991

Baleva M, Momchilova M, Phonons in PbTe and PbTe:Cr strained layers Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, 28 Oct.-2 Nov. 1990, Aachen, Germany Proceedings of the SPIE - The International Society for Optical Engineering vol.1361, pt.2 : 712-22, 1991

M. Baleva, L. Bozukov, V. Gaidarova and M. Momchilova, Proceedings of 1st General Conference of BPU, ed. K. Paraskevopoulos, 26-28 september, Thessaloniki, Greece p.712-715 (1991)



M. Momchilova, and M. Baleva, Proceedings of 1st General Conference of BPU, ed. K. Paraskevopoulos,26-28 september, Thessaloniki, Greece p.950-953 (1991)
1990

M. Baleva and M. Sendova, The Energy Gap Coefficient in the Nonisoelectronic Solid Solutions of the Type A4B6 - A2B6, Japanese J. Appl. Phys, 29 1437-1438 (1990).

M. Baleva, and V. D. Tuncheva, Lead oxides – a dielectric coating for lead salts, Proceedings of International Students Microelectronic Conference, 21-24 May, Zagreb,Yugoslavia 13 - 17 (1990)

M. Baleva, and M. Momchilova, Phonons in laser deposited thin PbTe films on KCl substrares, Proceedings of International Students Microelectronic Conference, 21-24 May, Zagreb,Yugoslavia 68 - 72 (1990)

M. Baleva and M. Sendova, Optical control of Electrical and Structural Thin Film Properties, Proceedings of International Conference Satelite of 20th International Conference on the Physics of Semiconductors, ed. D. Kushev, 199 -207 2-4 August, Sofia,Trans Tech Publications - Switzerland - Germany -UK - USA, (1990)

M. Baleva, and V. Tuncheva, Optical Identification of PbO Films Crystal Modification, Proceedings of International Conference Satelite of 20th International Conference on the Physics of Semiconductors, ed. D. Kushev, 199 -207 2-4 August, Sofia, Trans Tech Publications - Switzerland - Germany -UK - USA, (1990)

M. Baleva, and M. Momchilova, FIR Spectroscopy of PbTe films on KCl Substrates, Proceedings of International Conference Satelite of 20th International Conference on the Physics of Semiconductors, ed. D. Kushev, 199 -207 2-4 August, Sofia,Trans Tech Publications - Switzerland - Germany -UK - USA, (1990)
1989

Mariana Sendova and Mitra Baleva, Pulse laser evaporation- a method for semiconductor thin films deposition, in Optical coatings,Proceedings of International Simposium, 23-25 May, Shanghai, China p. 30- 33 (1989)



Mitra Baleva and Mariana Sendova, Some peculiarities of semiconductor films epitaxially grown by pulse laser evaporation, in Optical coatings, Proceedings of International Simposium, 23-25 May, Shanghai, China p. 102 - 104 (1989)
1988

M. I. Baleva, and S. Koliashev, The optcal dielectric constant in A4B6 compounds, Infrared Phys., 28 413-416 (1988)

M. Baleva, P. Gergova and M. S. Sendova, Photoconductivity of laser-deposited Pb1-xCdxSe films, Infrared Phys., 28 389 - 395 (1988).

М. И. Балева, Исследование зонной структури соединений А4B6 методом модулационной спектроскопии, в Спектралние методи решения проблем физики твердого тела, АН СССР, Москва, 11-46 1988.

M. I. Baleva, M. H. Maksimov, S. Metev and M. S. Sendova, Laser deposition of Pb1-xCdxSe films, Proceedings of First International Conference - Trends in Quantum Electronics, 2 – 6 September, 1985, Bucharest, invited

M. I. Baleva, S. Metev and M. S.Sendova, Thin film compound formation with pulsed laser-plasma fluxes, Proceedings of Third International Conference – Trends in Quantum Electronics, 29 August - 3 September, 1988, Bucharest, Romania, ed. I. Ursu and A. Prokhorov, published by Europian Physical Society, p.267 (1988), invited
1987

A. M. Abdula, M. I. Baleva, E. Dancheva, and M. H. Maksimov, Thermoreflectance study of Pb1-xGexTe in the cubic and rhombohedral phases, J. Phys. C, Solid State Phys., 20 743-751 (1987).



M. I. Baleva, M. H. Maksimov and M. S. Sendova, Energy gap and optcal dielectric constant of Pb1-xCdxSe films, Infrared Phys., 27 389 - 397 (1987).

M. Baleva, M. H. Maksimov and M. S. Sendova, Infrared absorption of laser-deposited PbSe films, J. Phys. C, 20 941 - 951 (1987).
1986

M. Baleva, M. Maksimov, S. Metev and M.Sendova, Laser deposition of Pb1-xCdxSe films, Rev. Roum. Phys., 31 1037-1041 (1986).

M. Baleva, D. Bakoeva, Some properties of laser deposited PbTe films, J. Mat. Sci. Lett., 5 37 (1986).
M. Baleva, Optical properties of laser-deposited PbTe films, Thin Solid Films, 139 L71 - L75 (1986)

M. I. Baleva, M. H. Maksimov, S. M. Metev and M. S. Sendova, Laser-assisted sputtering of

Pb1-xCdxSe films, J. Mat. Sci. Lett., 5 533 - 536 (1986).



M. I. Baleva, M. H. Maksimov, M. S. Sendova, Optical and electrical properties of Pb1-xCdxSe films, J. Mat. Sci. Lett., 5 537-539 (1986).

A. M. Abdula, M. I. Baleva, M. H. Maksimov and M. S. Sendova, Thermoreflectance study: I. PbSe energy band structure, J. Phys.D, Appl. Phys., 19 1771-1777 (1986)

A. M. Abdula, M. I. Baleva, and M. H. Maksimov, Thermoreflectance study: II. Inter-band transitions in Pb1-xCdxSe alloys, J. Phys. D, Appl. Phys., 19 1779-1784 (1986)
1985

M. Baleva, M. Christova, A. Iordanov, S. Metev, S.Peneva, Laser deposition of PbTe films on glass substrate, J. Matt. Sci.Lett., 4 353 (1985).

M. I. Baleva, Temperature dependence of the Hall coeficient in Cr-doped PbTe, J. Phys.C, Solide State, 18 L599 (1985).


1984

M. I. Baleva, I. Vriashkov, On the Energy Band Structure of Bismuth Telluride, Bulg. J. Phys.,11 415 (1984)

M. I. Baleva, L. D. Borisova, and V. D. Valchev, Transport properties of Pb0.997Cr0.03Te, J. Phys. C, Solid State, L895 (1984).

M. I. Baleva, L. D. Borissova, V. D. Vulchev, Influence of Cr-impurity on the optical and transport properties of PbTe, Ann. Univ. Sofia, 78 81-88 (1984).

M. I. Baleva, A. Jordanov, and S. Metev,Some Properties of Laser Deposited PbTe Thin Films, Ann. Univ. Sofia,78 89-96 (1984)
1983

M. I. Baleva and S. K. Plachkova, The phase transition in solid solutions of the Agx/2Pb1-xSbx/2Te Type, J. Phys. C:Solide State,16 791 (1983).

M. I. Baleva and L. D. Borisova, Optical Absorption in PbTe doped with Cr, J. Phys. C, Solide State, 16 L907 (1983).
1981

M. Baleva and S. D. Stoyanov, On the Optical Properties and Electronic Structure of Solid Solutions of Agx/2Pb1-xSbx/2Te Type, Phys. Stat. Sol. (b), 104 734 (1981).
1980

M.Baleva, Reflectance and Thermoreflectance of GeTe, Phys.St.Sol.(b)}, 99 341-346 (1980).

M.Baleva and L.Borisova, Absorption Edge of Solid Solutions of Agx/2Pb1-xSbx/2Te Type,Phys. Stat..Sol.(b),101 K57 (1980).

M. Baleva, On the Optical Properties and Electronic Structure of AgSbTe2, Phys.St. Sol. (b),101 389 (1980).
1978

M. Baleva, Thermoreflectance of PbTe, Phys.St.Sol.(b), 88(1):335-339 (1978).
1973

M. Borisov, M. Baleva, M. Iliev, Thermomodulated Photoconductivity, (TMPh) of CdS, Comptes rendus de BAS, 26 319 (1973).

M. Iliev and M. Baleva, WAVELENGTH MODULATION SPECTROSCOPY OF EXCITON LINES AND INTERFERENCE FRINGES SURF SCI 37 (1): 585-590 (1973).
1972

M. Iliev, Baleva, M. Structure of the modulation spectrum of a resonance line Annuaire de l'Universite de Sofia Faculte de Physique vol.64-65: 117-29, 1970 –1972


1971

M. Iliev and M. Baleva, Determination of the Exiton Parameters of CdSe from Thermoreflectance Measurements, Phys. St. Sol. b, 47 K78 (1971).

Moldovanova, M., Savinova, R., Baleva, M. On some parameters of GaAs doped with Ni, Annuaire de l'Universite de Sofia Faculte de Physique vol.63 : 151-5, (1971).





32. M. Baleva, T. Georgiev and G. Lashkarev, On the temperature dependence of the energy gap in PbSe and PbTe, J. Phys: Condens. Matter, 1 2935 – 2940 (1990).



Проекти 2001-2008



  1. Охарактеризиране на силициди, получени чрез йонно-лъчев синтез, no Ф1103/01, 2001- 2004, награден, МОН, 4 800 лв.

  2. Оптично и структурно охарактерезиране на слоеве и преципитати от полупроводниковата -FeSi2 фаза , получени чрез йонно-лъчев синтез, 2001- 2002, фонд „Научни изследвания” при СУ, 375 лв

  3. Енергетични профили на хетеропрехода Si/-FeSi2, получени чрез йонно-лъчева имплантация на различни дози Fe и отгряти при различни режими, , 2002 – 2004, фонд „Научни изследвания” при СУ, 1150 лв

  4. Оптично и структурно охарактерезиране на слоеве и преципитати от полупроводникови силициди, no Ф1301/03, 2003- 2006, МОН , 12 800 лв

  5. Spectroscopy of nanomaterials, French- Bulgarian bilateral Programme PAI-Rila 2/5, 2004/2006, 15 800 лв.

  6. Фононни моди на Mg2Si, внедрен в Si матрица под формата на слоеве и преципитати, 2005 – 2006, фонд „Научни изследвания” при СУ, 2006 лв

  7. Интерфейсни елементарни възбуждания в образци, представляващи силициева матрица с внедрени в нея нановключения от силициди 2007, фонд „Научни изследвания” при СУ, 2120 лв

  8. Интерфейсни елементарни възбуждания в силициди на нослоеве с грапава повърхност образци, формирани в силициева матрица чрез йонно- лъчев синтез,2008, фонд „Научни изследвания” при СУ, 2200 лв





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