|
(2.1.2) Списък на публикации (чужбина):
№
|
Автори
|
Заглавие
|
Списание
|
Том
|
Страници
|
Година
|
1
|
T. Furusho, S.K. Lilov, S. Ohshima,
S. Nishino
|
“Effect of Tantalum in Crystal Growth of Silicon Carbide by Sublimation Close Space Technique”
|
Japn. J. Appl. Phys., Part I,
|
40
|
6737-6740
|
2001
|
2
|
T. Furusho, S.K. Lilov, S. Ohshima ,
S. Nishino
|
“Crystal Growth of Silicon Carbide in Hydrogen Atmosphere by Sublimation Close Space Technique”
|
J. Crystal Growth
|
237-239
|
1235-1238
|
2002
|
3
|
V. Marinova, I. Yanchev, M. Daviti,
K. Kyritsi, A.N. Anagnostopoulos
|
“Electron- and Hole-Mobility of Hg(BrxI1-x)2 Crystals”
|
Materials Research Bulletin
|
37
|
1991-1995
|
2002
|
4
|
M. Veleva, M.M. Gospodinov, M. Daviti, A.N. Anagnostopoulos, K.M. Paraskevpoulos, E.K. Polychroniadis, I.Y. Yanchev
|
“Dielectric Behaviour of Mixed HgBrxI1-x Crystals”
|
Journal of Materials Science Letters
|
19
|
1019
|
2002
|
5
|
M. Gospodinov, I.Y. Yanchev, D. Petrova,
M. Veleva
|
“AC Conductivity of Doped Bi12SiO20 Crystals”
|
Materials Science and Engineering
|
B77
|
88-92
|
2003
|
6
|
I.Y. Yanchev
|
“Randomly Distributed Charges and Potential Fluctuations in MOS Structures”
|
Chaos, Solitons and Fractals
|
17
|
441-443
|
2003
|
7
|
E. György, I. N. Mihailesku, M. Baleva,
E. P. Trifonova, M. Abrashev,
V. Darakchieva, A. Zocco, A. Perrone
|
“About the possible diminution of the sp3 C presence along with the increase of the nitrogen enclosure in the CNx thin films produced by reactive pulsed laser deposition”
|
J. Mater. Sci
|
36
|
1951-1956
|
2001
|
8
|
E. György, I. N. Mihailesku, M. Baleva,
M. Abrashev, E. P. Trifonova, A. Szekeres,
A. Perrone
|
“Correlation between the chemical bonding and the physical properties of the CNx films obtained by pulsed laser deposition from C targets in low-pressure N2”
|
Mater. Sci. & Eng.
| B97 |
251-257
|
2003
|
9
|
E. Goranova, B. Amov, M. Baleva, E. P. Trifonova, P. Yordanov
|
“Ion beam synrhesis of Mg2Si”
|
J. Mater. Sci.
|
39
|
1857-1859
|
2004
|
10
|
A.A. Donkov,A.D. Donkov
E.I Grancharova
|
“The exact solution of the Cauchy problem for a generalized “linear” vectorial Fokker-Plank equation – algebraic opproach”
|
Phys.of Atomic Nuclei
|
65
|
1049
|
2002
|
11
|
A.A. Donkov,A.D Donkov
E.I Grancharova
|
“Exact solution of classical motion equation for a charged particle in external electric and magnetic fields”
|
Phys.of Atomic Nuclei
|
65
|
1053
|
2002
|
12
|
T. Paskova, E. Valcheva, J. Birch,
S. Tungasmita, P.-O.A. Persson, P. Paskov,
S. Evtimova, M. Abrashev B. Monemar
|
“Deffect and Stress Relaxation in HVPE-GaN Films Using High Temperature Reactively Sputtered AlN Buffer”
|
J. Cryst. Growth
|
230
|
381-386
|
2001
|
13
|
G.P. Vassilev, J.-C. Tedenac, E.S. Dobrev, S.K. Evtimova
|
“On the Phase Equilibria in the System Ag-Sn-Zn”
|
Archives of Metallurgy
|
46
|
249-254
|
2001
|
14
|
G.P. Vassilev, E.S. Dobrev, S.K. Evtimova, J.-C. Tedenac
|
“Studies of the Phase Equilibria in the Ag-Sn-Zn System”
|
J. Alloys and Compounds
|
327
|
285-291
|
2001
|
15
|
B. Arnaudov, T. Paskova, E.M. Goldys,
S. Evtimova, B. Monemar
|
“Modeling of the Free-electron Recombination Band in Emission Spectra of Highly Conducting n-GaN
|
Phys. Rev. B
|
64
|
045213/1–045213/12
|
2001
|
16
|
G.P. Vassilev, S.K. Evtimova, J.-C. Tedenac, E.S. Dobrev,
|
“Experimental Study of the Ternary Ag-Sn-Zn System Trough Diffusion Couples”
|
J. Alloys and Compounds
|
334
|
182-186
|
2002
|
17
|
B. Arnaudov, T. Paskova,, S. Evtimova,
E. Valcheva, M. Heuken, B. Monemar
|
“Multilayer Model for Hall Effect Data Analysis of Semiconductor Structures with Step – Changed Conductivity”
|
Phys. Rev. B
|
67
|
045314/1-045314/10
|
2003
|
18
|
B. Arnaudov, T. Paskova,, O. Valassiades, P.P. Paskov, S. Evtimova, B. Monemar,
M. Heuken,
|
“Magnetic Field Induced Localization of Electrons in InGaN/GaN Multiple Quantum Wells”
|
Appl. Phys. Lett.
|
83
|
2590-2592
|
2003
|
19
|
B. Arnaudov, T. Paskova,, O. Valassiades, P.P. Paskov, S. Evtimova, B. Monemar,
M. Heuken,
|
“Magnetic Field Induced Localization of Electrons in InGaN/GaN Multiple Quantum Wells”
/избрана за публикуване/
|
Virtual Journal of Nanoscale Science & Technology
|
Oct. 6
|
|
2003
|
20
|
G.P. Vassilev, P. Docheva, N. Nancheva,
B. Arnaudov, I. Dermendjiev
|
“Technology and Properties of Magnetron Sputtered CuInSe2 Layers”
|
Materials Chemistry and Physics
|
82
|
905-910
|
2003
|
21
|
B. Arnaudov, T. Paskova, P.P. Paskov,
B. Magnusson, E. Valcheva, B. Monemar,
H. Lu, W.J. Schaff, H. Amano, I. Akasaki
|
“Energy Position of Near Band – Edge Emission Spectra of InN Epitaxial Layers with Different Doping Levels”
|
Phys. Rev. B
|
69
|
115216/1 –115216/5
|
2004
|
22
|
B. Arnaudov, T. Paskova, P.P. Paskov,
B. Magnusson, E. Valcheva, B. Monemar,
H. Lu, W.J. Schaff, H. Amano, I. Akasaki
|
“Free-to-bound radiative recombination in highly conducting InN epitaxial layers”
|
Superlatices and Microstructures
|
36
|
563-571
|
2004
|
23
|
A. Popov, N. Nаjdenov
|
“Study and analisys of degradation processes in the electronic equip;ent operating at Kozloduy NPP”
|
J.Optoelectronics and Advanced Materials
|
7
|
321-324
|
2005
|
(2.1.2) Списък на публикации (български):
№
|
Автори
|
Заглавие
|
Списание
|
Том
|
Страници
|
Година
|
1
|
S. Lilov, T. Nishiguchi, S. Nishino.
|
“Study on the Growth Conditions of Silicon Carbide Monocrystals from Vapor Phase”
|
Annuaire de L'Univ. Sofia, Fac.de Phys.
|
96
|
83-88
|
2003
|
2
|
S.K. Lilov, T. Furusho, S. Nishino
|
“Growth of Silicon Carbide Layers by Sublimation Epitaxy”
|
Annuaire de L'Univ. Sofia, Fac.de Phys.
|
96
|
89-95
|
2003
|
3
|
С. Лилов
|
“Получаване на силициев карбид”
|
Annuaire de L'Univ. Sofia, Fac.de Phys.
|
97
|
141-146
|
2004
|
4.
|
М. Сасаки, С. Лилов, Ш. Нишино
|
“Изследване гтвърдостта на силициев карбид”
|
Annuaire de L'Univ. Sofia, Fac.de Phys.
|
97
|
147-154
|
2004
|
5
|
Т. Фурушо, С. Лилов, Ш. Нишино
|
“Изследване процеса на израстване на обемни монокристали от 4H-SiC”
|
Annuaire de L'Univ. Sofia, Fac.de Phys.
|
98
|
121-128
|
2005
|
6
|
Х. Такаги, Т. Нишигучи, Ш. Ота,
Т. Фурушо, С. Ошима, С. Лилов,
Ш. Нишино
|
“Израстване на монокристален 6H-SiC върху 3С-SiC чрез сублимационна епитаксия”
|
Annuaire de L'Univ. Sofia, Fac.de Phys.
|
98
|
129-137
|
2005
|
7
|
A. Popov K. Varblianska, S. Tzeneva
|
“Ohmic contscts to InAsSb epitaxial layers doped with group IV elements”
|
Годишник на СУ, физ.ф-т
|
95
|
83
|
2002
|
8
|
А. Попов
|
“Сътрудничество с БАН”
|
Наука
|
5
|
17
|
2001
|
9
|
А. Попов
|
“За научните степени и звания”
|
Наука
|
2
|
8
|
2002
|
10
|
А.Попов , Р. Николов
|
“Информационни технологии в образованието”
|
Наука
|
4
|
9
|
2002
|
11
|
А.Попов
|
“С оптимизъм за високите технологии”
|
Наука
|
6
|
33
|
2002
|
12
|
E.P. Trifonova, R. Yakimova, T. Angelova,
E. Jansen
|
“Microhardness-depth profiles of Si/SiC layered structures prepared by chemical vapour deposition”
|
Bulg. J. Phys
|
28
|
147-152
|
2001
|
13
|
G. Vassilev, B. Arnaudov, P. Docheva,
N. Nancheva, M. Balcheva
|
“CuInSe2 - Alternative Material for Solar Energy Conversion”
|
Annuaire De L’Universite De Sofia “St. Kliment Ohridski” Faculte De Chimie
|
92-94
|
207-210
|
2001
|
14
|
M. Gospodinov, V. Marinova, I. Yanchev,
A. Anagnostopoulos, K. Kyritsi
|
“ The SnS2-SnSe2 System: Growth and Morphology”
|
Bulg. J. Phys.
|
27
|
169-171
|
2000
|
(2.1.2) Участия на конференции, публикувани в списания:
№
|
Автори
|
Заглавие
|
Конференция
|
Град
|
Държава
|
Дати
|
Списание
|
Том
|
Страници
|
Година
|
1
|
B. Arnaudov, T. Paskova, S. Evtimova, M. Heuken, B. Monemar
|
“Hall Effect Data Analysis of GaN n+n Structures”
|
International Workshop on Nitride Semiconductors
|
Aachen
|
Germany
|
July 22-25 2002
|
Phys. Stat. Solidi (b)
|
234
|
872-876
|
2002
|
2
|
S. Evtimova, B. Arnaudov, T. Paskova, B. Monemar, M. Heuken
|
“Effect of Carrier Concentration on the Microhardness of GaN Layers
|
12th International School on Condensed Matter Physics (ISCMP) “Modern Trends in Condensed Matter Science and Technology”
|
Varna
|
Bulgaria
|
Sept. 3-8 2002
|
J. of Material Science – Materials in Electronics
|
14
|
905-910
|
2003
|
3
|
B. Arnaudov, T. Paskova, O. Valassiades, S. Evtimova, P.P. Paskov, B. Monemar, M. Heuken,
|
“Magnetic Freeze-out of Electrons in InGaN/GaN Multiple Quantum Wells”
|
5th International Conference on Nitride Semiconductors
|
Nara
|
Japan
|
May 25-30 2003
|
Phys. Stat. Solidi (c)
|
0
|
2635-2638
|
2003
|
4
|
T. Paskova, P.P. Paskov, V. Darakchieva, E.M. Goldys, E. Valcheva, B. Arnaudov, B. Monemar
|
“Free-Standing HVPE-GaN Quasi-Substrates: Impurity and Strain Distributions”
|
International Workshop on Nitride Semiconductors
|
Aachen
|
Germany
|
July 22-25 2002
|
Phys. Stat. Sol. (c)
|
0
|
209-213
|
2002
|
5
|
B. Monemar, P.P. Paskov, H. Haradizadeh, J. Bergman, E. Valcheva, V. Darakchieva, B. Arnaudov, T. Paskova, P.O. Holtz, G. Pozina, S. Kamaiyma, M. Iwaya, H. Amano, I. Akasaki
|
“Optical Investigations of AlGaN/GaN Quantum Wells and Superlattices”
Invated talk
|
International Conference on Photo-Responsive Materials
|
Kariega
|
South Africa
|
Febr.
25-29 2004
|
Phys. Stat. Solidi (a)
|
201
|
2251-2258
|
2004
|
6
|
T. Paskova, P.P. Paskov, E. Valcheva, V. Darakchieva, J. Birch, A. Kasik, B. Arnaudov, S. Tungasmita, B. Monemar
|
Polar and Nonpolar GaN “Growth by HVPE: Preferable Substrates dor Nitride – based Emitting Diodes”
|
International Conference on Photo-Responsive Materials
|
Kariega
|
South Africa
|
Febr.
25-29 2004
|
Phys. Stat. Solidi (a)
|
201
|
2265-2270
|
2004
|
7
|
B. Monemar, H. Haradizadeh, P.P. Paskov, J.P. Bergman, E. Valcheva, B. Arnaudov, A. Kasic, P.O. Holtz, G. Pozina, S. Kamaiyama, M. Iwaya, H. Amano, I. Akasaki
|
“Radiative Recombination Processes in Al0.07Ga0.93N/GaN Multiple Quantumtructures: Role of Hole Localization”
|
5th International Symposium on Blue Laser and Light Emitting Diodes
|
Gyeongji
|
Korea
|
March 2004
|
Phys. Stat. Solidi (c)
|
1
|
2500-2503
|
2004
|
8
|
T. Zorba, K.M. Paraskevopoulos, D.I. Siapkas, E. Pavlidou, S. Angelova D.B. Kushev
|
“The Xth Cent. Church in Drustar: Study of Wall Paintings by Spectroscopic Methods”
|
SYMPOSIUM II, Materials Issues in Art and Archaeology VI, 2001 MRS Fall Meeting
|
Boston
|
USA
|
November 26 - 30, 2001
|
Mat.Res. Soc. Symp. Proc. ,
|
712
|
II 10.10.1-8
|
2002
|
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